PART |
Description |
Maker |
MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
TSAL7200-16 |
High Power Infrared Emitting Diode
|
Vishay Siliconix
|
MIE-334A4 334A4 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
IR333 GB-IR333C51C GB-IR333A21BT GB-IR333A21C GB-I |
HIGH POWER SOLUTION INFRARED EMITTING DIODES
|
List of Unclassifed Manufacturers ETC[ETC]
|
LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes Infrared Light Emitting Diodes From old datasheet system GaAs Infrared Light Emitting Diode
|
Panasonic Corporation Matsshita / Panasonic PANASONIC[Panasonic Semiconductor]
|
TSAL5300-FSZ TSAL5300-GSZ |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Intertechnology,Inc. Vishay Siliconix
|
MIE-534A4 |
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
MIE-114H4 |
AlGaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
MIE-304A4 |
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
VSML3710-GS08 VSML3710-GS18 VSML371009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|